A reaction-transport model of GaAs growth by metalorganic chemical vapor deposition using trimethyl-gallium and tertiary-butyl-arsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference59 articles.
1. Metalorganic chemical vapor deposition of III‐V semiconductors
2. Metal-organic vapor phase epitaxy of compound semiconductors
3. Transport phenomena and chemical reaction issues in OMVPE of compound semiconductors
4. Low-pressure organometallic epitaxy of the III–V compounds
5. Flow Phenomena in Chemical Vapor Deposition of Thin Films
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