Charge transient and optical absorption measurements of characteristic gap states in phosphorus doped a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Energy dependence of electron-capture cross section of gap states inn-typea-Si:H
2. Temperature dependence of electron-capture cross section of localized states ina−Si:H
3. K. Tanaka, Defects in a - Si:H, these proceedings.
4. Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodes
5. Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy
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1. The structure of lithium silicon sulphide glass systems;Journal of Physics: Condensed Matter;1997-03-24
2. Effect of non-Ohmic back contacts in capacitance transient measurements on hydrogenated amorphous silicon;Physical Review B;1995-07-15
3. Effect of Contacts on Capacitance Transient Measurements in N-Type Hydrogenated Amorphous Silicon;MRS Proceedings;1995
4. Charge redistribution process on gap states in hydrogenated amorphous silicon;Physical Review Letters;1993-11-01
5. Energetic spectrum of deep localized states of D-centers originated from silicon dangling bonus in a-Si:H;Journal of Non-Crystalline Solids;1987-02
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