Charge redistribution process on gap states in hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.71.2979/fulltext
Reference15 articles.
1. a-Si:H gap states investigated by CPM and SCLC
2. Impurity-defect complexes and doping mechanism ina-Si:H
3. Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
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