Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.69.3358/fulltext
Reference19 articles.
1. Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide
2. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
3. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
4. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
5. Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonance
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