Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonance
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.4066/fulltext
Reference13 articles.
1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
2. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
3. Optical detection of magnetic resonance in semiconductors
4. Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs
5. Measurement of deep levels in hydrogenated amorphous silicon by transient voltage spectroscopy
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