Temperature dependence of electron-capture cross section of localized states ina−Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.27.5184/fulltext
Reference12 articles.
1. Energy dependence of electron-capture cross section of gap states inn-typea-Si:H
2. Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient Spectroscopy
3. ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H
4. Measurement of the density of gap states in hydrogenated amorphous silicon by space charge spectroscopy
5. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
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