Structural memory and defect relaxation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
2. Observation of slow dangling-bond relaxation inp-type hydrogenated amorphous silicon
3. Optical-bias effects in electron-drift measurements and defect relaxation ina-Si:H
4. Light-induced transient changes of the occupied density of defect states of a-Si:H
5. Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics
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1. Laplace deep level transient spectroscopy study of intrinsic hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;2015-03
2. Creation and relaxation of light- and bias-induced metastabilities in Cu(In,Ga)Se2;Journal of Applied Physics;2009-09-15
3. Relaxation of light induced metastabilities in Cu(In,Ga)Se2 with different Ga content;Thin Solid Films;2009-02
4. Activated mechanisms in amorphous silicon: An activation-relaxation-technique study;Physical Review B;2000-01-15
5. Dangling-bond levels and structure relaxation in hydrogenated amorphous silicon;Physical Review B;1997-10-15
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