Observation of slow dangling-bond relaxation inp-type hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.2173/fulltext
Reference21 articles.
1. Photoluminescence and lifetime studies on plasma discharge a-Si
2. Strong electron-phonon coupling in defect luminescence in P-dopeda-Si:H
3. Dangling bonds in doped amorphous silicon: Equilibrium, relaxation, and transition energies
4. Observation of a novel relaxation process associated with electronic transitions from deep (D) defects in hydrogenated amorphous silicon
5. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
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