Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors-Reference-Cited by-同舟云学术

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Photo-oxidation of amorphous silicon-carbon alloys and its use in field effect transistors

Published:1989-12 Issue:1-3 Volume:115 Page:84-86
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

I.B. Wilson John,Qayyum Asif,Al-Sabbagh Saad,Jubber Michael,John Philip

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. High spatial resolution photo-oxidation of a-Si:C at low temperatures H films

2. Amorphous silicon‐silicon nitride thin‐film transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Small-angle X-ray scattering studies of a-Si:C:H;Journal of Non-Crystalline Solids;1995-10

2. The effect of hydrogen dilution on the interatomic bonding of amorphous hydrogenated silicon: carbon;Journal of Non-Crystalline Solids;1994-03

3. The Structure of Amorphous Hydrogenated Silicon:Carbon Alloys Using X-Ray and Neutron Scattering and Computer Simulation - The Effect of Hydrogen Dilution;MRS Proceedings;1992

4. Preparation of SixCyHz films from methylsilane by plasma-enhanced chemical vapor deposition;Thin Solid Films;1991-07

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