High spatial resolution photo-oxidation of a-Si:C at low temperatures H films-Reference-Cited by-同舟云学术

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High spatial resolution photo-oxidation of a-Si:C at low temperatures H films

Published:1989 Issue:14 Volume:25 Page:930
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

John P.,Qayyum A.,Wilson J.I.B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890624?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Einspuch, N.G., VLSI electronics microstructure science, (Academic 1981–1988),1–16,

2. Ledwith, A.: Moss, S.J., Ledwith, A., The chemistry of the semiconductor industry, (Blackie & Son 1987)

3. John P., Qayyum A.,Wilson J.I.B.: in preparation

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Oxidation Rates for a ‐ Si1 − x C x : H Films Deposited from Pulsed and Continuous Wave RF Plasmas;Journal of The Electrochemical Society;1998-09-01

2. Photo-oxidation of a-Si:C:H studied by in situ XPS;Journal of Non-Crystalline Solids;1995-11

3. Small-angle X-ray scattering studies of a-Si:C:H;Journal of Non-Crystalline Solids;1995-10

4. Structural analysis of amorphous hydrogenated silicon-carbon thin films from silane/propane mixtures;Journal of Non-Crystalline Solids;1994-10

5. Photo-oxidation of a-Si : C : H films;Journal of Non-Crystalline Solids;1993-12

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