Hydrogen diffusion and related defects in hydrogenated amorphous silicon carbide-Reference-Cited by-同舟云学术

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Hydrogen diffusion and related defects in hydrogenated amorphous silicon carbide

Published:1991-04 Issue:2 Volume:128 Page:133-138
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Demichelis F.,Pirri C.F.,Tresso E.,Rigato V.,DellaMea G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

2. Metastable paramagnetism in hydrogenated amorphous silicon: Evidence for a new class of defects in tetrahedrally bonded amorphous semiconductors

3. Metastable Defects in Amorphous-Silicon Thin-Film Transistors

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2. Variation of the nanostructural feature of nc-SiC:H thin films with post-deposition thermal annealing;Thin Solid Films;2014-11

3. Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems;Journal of Applied Physics;2013-08-21

4. Mechanical, Thermochemical, and Microstructural Characterization of AHPCS-Derived SiC;Ceramic Transactions Series;2012-04-20

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