Ionization enhanced crystallization in amorphous germanium

Author:

Germain P.,Squelard S.,Bourgoin J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C;Crystal Growth & Design;2023-12-04

2. Transient kinetics in solid phase epitaxy of Ni doped amorphous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

3. Crystallization kinetics of amorphous S20Se80;Journal of Thermal Analysis;1990-07

4. Ionization Assisted Transformations of Defects in Carbon Implanted Silicon;Physica Status Solidi (a);1989-03-16

5. Solid phase growth of silicon and germanium;Journal of Crystal Growth;1984-11

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