Capacitance characterization of tapered through-silicon-via considering MOS effect
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference23 articles.
1. A distributed filter within a switching converter for application to 3-D integrated circuits;Rosenfeld;IEEE Trans. VLSI Syst.,2011
2. Achieving stable through-silicon via (TSV) capacitance with oxide fixed charge;Zhang;IEEE Electron Device Lett.,2011
3. Through silicon via: from the CMOS imager sensor wafer level package to the 3D intergration;Gagnard;Microelectron. Eng.,2010
4. Through-silicon-via insertion for performance optimization in three-dimensional integrated circuits;Qian;Microelectron. J.,2012
5. Three-Dimensional Integrated Circuit Design;Pavlidis,2009
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