Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application-Reference-Cited by-同舟云学术

Electrical modeling of tapered TSV including MOS-Field effect and substrate parasitics: Analysis and application

Published:2020-06 Issue: Volume:100 Page:104797
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Nabil Amira,Bernardo Jose A.,Ma Yue,Abouelatta Mohamed,Shaker Ahmed,Bouchet Latifa Fakri,Ragai Hani,Gontrand Christian

Publisher

Elsevier BV

Subject

General Engineering

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1. Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint;Microelectronic Engineering;2024-07

2. Study on the electrical breakdown failure mode transition of TSV-RDL;Microelectronics Journal;2023-11

3. A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis;Applied Sciences;2023-07-18

4. Addressing Benign and Malicious Crosstalk in Modern System-on-Chips;IEEE Access;2023

5. Impact of a Tubular Dielectric Medium on Peak Noise and Crosstalk Delay in a Coaxial TSV;Lecture Notes in Electrical Engineering;2023