Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint-Reference-Cited by-同舟云学术

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Technology review of CNTs TSV in 3D IC and 2.5D packaging: Progress and challenges from an electrical viewpoint

Published:2024-07 Issue: Volume:290 Page:112189
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Abdullah M.F.,Lee H.W.

Funder

Kementerian Sains, Teknologi dan Inovasi

Publisher

Elsevier BV

Reference123 articles.

1. Cramming more components onto integrated circuits;Moore;Electronics,1965

2. International Technology Roadmap for Semiconductors;Executive summary,2005

3. Semiconductor Advanced Packaging;Lau,2021

4. Advancement and challenges in MOSFET scaling;Ratnesh;Mater. Sci. Semicond. Process.,2021

5. A 16 GB 1024 GB/s HBM3 DRAM with source-synchronized bus design and on-die error control scheme for enhanced RAS features;Ryu;IEEE J. Solid State Circuits,2023

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1. Electronic and mechanical properties of η-Cu6Sn5 doped by Ni: A first-principles study;Materials Today Communications;2024-08

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