Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference23 articles.
1. Self-assembled Ge/Si dots for faster field-effect transistors
2. Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions
3. Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001)
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Transition States Between Pyramids and Domes During Ge/Si Island Growth
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