Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications-Reference-Cited by-同舟云学术

Newly energy-efficient SRAM bit-cell using GAA CNT-GDI method with asymmetrical write and built-in read-assist schemes for QR code-based multimedia applications

Published:2021-08 Issue: Volume:114 Page:105117
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Darabi Abdolreza^ORCID,Salehi Mohammad Reza,Abiri Ebrahim

Publisher

Elsevier BV

Subject

General Engineering

Reference49 articles.

1. Stability enhancing SRAM cell for low power LUT design;Swamynathan;Microelectron. J.,2020

2. Embedded memory options for ultra-low power IoT devices;Mohammad;Microelectron. J.,2019

3. Performance evaluation of single-ended disturb-free CNTFET-based multi-Vt SRAM;Kumar Patel;Microelectron. J.,2019

4. A low power and energy efficient 4:2 precise compressor based on novel 14T hybrid full adders in 10 nm wrap gate CNTFET technology;Khaleqi Qaleh Jooq;Microelectron. J.,2020

5. Carbon nanotube-based CMOS SRAM: 1k bit 6T SRAM arrays and 10T SRAM cells;Kanhaiya;IEEE Trans. Electron. Dev.,2019

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