Single-End Half-Select Free Static RAM Cell Based on BWG CNFET Tri-value Buffer Gate Applicable in Highly Efficient IoT Platforms
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Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s13369-023-08692-x.pdf
Reference33 articles.
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4. Li, G.; Wang, P.; Kang, Y.; Zhang, Y.: A low standby-power fast carbon nanotube ternary SRAM cell with improved stability. J. Semicond. 39(8), 085002 (2018)
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