Single-sided gate-wrap-around CNTFET SRAM cell for utilization in reliable IoT-based platforms-Reference-Cited by-同舟云学术

Single-sided gate-wrap-around CNTFET SRAM cell for utilization in reliable IoT-based platforms

Published:2023-05 Issue: Volume:163 Page:154605
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Darabi Abdolreza,Salehi Mohammad Reza,Abiri Ebrahim

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering

Reference40 articles.

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4. A robust and write bitline free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology;Karamimanesh;Microelectron J,2021

5. One-sided 10T static-random access memory cell for energy-efficient and noise-immune internet of things applications;Darabi;Int J Circuit Theory Appl,2022

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