InxGa1−xN refractive index calculations
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference31 articles.
1. Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition
2. Theory of AlN, GaN, InN and their alloys
3. Gas-source molecular beam epitaxy of III–V nitrides
4. Control of electron density in InN by Si doping and optical properties of Si-doped InN
5. Narrow bandgap group III-nitride alloys
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