Theory of AlN, GaN, InN and their alloys
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference72 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. GaN, AlN, and InN: A review
3. H. Rücker, to be published.
4. Simplified method for calculating the energy of weakly interacting fragments
5. Tight-binding models and density-functional theory
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1. The influence of temperature and composition on the crystal properties of Al$$_{1-x}$$B$$_{{x}}$$N semiconducting ternary alloys;Pramana;2022-02-08
2. Effect of in content on thermoelectric performance of In Ga1−N alloys: Hybrid density functional theory study based on realistic models;Journal of Physics and Chemistry of Solids;2021-07
3. Ab initio studies of structural, electronic and magnetic properties of Al1-xMnxN in zinc blende structure;Computational Condensed Matter;2021-03
4. Composite Nitride Nanoceramics in the System Titanium Nitride (TiN)-Aluminum Nitride (AlN) through High Pressure and High Temperature Sintering of Synthesis-Mixed Nanocrystalline Powders;Materials;2021-01-27
5. STRUCTURAL AND ELECTRONIC PROPERTIES OF AlN IN ROCKSALT, ZINC BLENDE AND WURTZITE PHASE: A DFT STUDY;Digest Journal of Nanomaterials and Biostructures;2021-01
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