Gas-source molecular beam epitaxy of III–V nitrides-Reference-Cited by-同舟云学术

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Gas-source molecular beam epitaxy of III–V nitrides

Published:1997-06 Issue:1-2 Volume:178 Page:87-101
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Davis R.F.,Paisley M.J.,Sitar Z.,Kester D.J.,Ailey K.S.,Linthicum K.,Rowland L.B.,Tanaka S.,Kern R.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference87 articles.

1. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

2. Diamond, Silicon Carbide and Related Wide Bandgap Semiconductor Materials;Pankove,1990

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1. AlN grown by CBE for power device applications;AIP Advances;2020-06-01

2. Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source;Japanese Journal of Applied Physics;2019-01-21

3. Tribocorrosion Behaviour of Niobium Nitride/Niobium Multilayer in Contact with Ringer Lactate;International Journal of Electrochemical Science;2015-11

4. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers;Applied Physics Letters;2015-01-12

5. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

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