AlN grown by CBE for power device applications
Author:
Affiliation:
1. Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Quebec J1K 0A5, Canada
2. GaN Systems, 1145 Innovation Drive, Ottawa, Ontario K2K 3G8, Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5142615
Reference50 articles.
1. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2. A review of GaN-based optoelectronic devices on silicon substrate
3. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
4. Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
5. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
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