Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module-Reference-Cited by-同舟云学术

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Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module

Published:2021-10 Issue: Volume:116 Page:105202
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Du Mingxing^ORCID,Xin Jinlei,Wang Hongbin,Ouyang Ziwei,Wei Kexin

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Reliability evaluation of multichip phase-leg IGBT modules using pressureless sintering of nanosilver paste by power cycling tests;Fu;IEEE Trans. Power Electron.,2017

2. Analytical PSpice PSpice model for SiC MOSFET based high power modules;Johannesson;Microelectron. J.,2016

3. Monitoring bond wires fatigue of multichip IGBT module using time duration of the gate charge;Wang;IEEE Trans. Power Electron.,2021

4. A novel bond wire fault detection method for IGBT modules based on turn-on gate voltage overshoot;Yang;IEEE Trans. Power Electron.,2021

5. Prediction and validation of cumulative distribution function for power semiconductor devices with mission profiles in motor drive application;Ma;IEEE Trans. Power Electron.,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lifetime Prediction for Lift-off of Bond Wires in IGBTs Using Paris Law With Analytical Calculation of Crack Length;IEEE Transactions on Power Electronics;2023-10

2. Parameter extraction method for Cauer model considering dynamic thermal diffusion boundaries in IGBT module;Microelectronics Journal;2023-01

3. Practical Challenges of High-Power IGBT’s I-V Curve Measurement and Its Importance in Reliability Analysis;Electronics;2021-08-29

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