A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot-Reference-Cited by-同舟云学术

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A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot

Published:2021-07 Issue:7 Volume:36 Page:7501-7512
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Yang Yanyong^ORCID,Zhang Pinjia^ORCID

Funder

National Key Research and Development Program of China Stem Cell and Translational Research

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

https://ieeexplore.ieee.org/ielam/63/9371270/9307256-aam.pdf

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Open-Circuit Fault-Tolerant High-Gain Multilevel Inverter Topology With Minimum of 2/3 Level in Postfault Condition;IEEE Transactions on Power Electronics;2024-10

2. An Aging Monitoring Method of Bond Wires Based on Voltage Ringing Frequency Characteristics in IGBT Modules;IEEE Transactions on Device and Materials Reliability;2024-06

3. Bond Wire Lift-off Sensor Circuit for Power Devices Integrated in Gate Driver IC;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

4. An Online Monitoring Method for Bond Wire Fatigue in IGBT Module;IEEE Journal of the Electron Devices Society;2024

5. Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN);IEEE Access;2024

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