Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer-Reference-Cited by-同舟云学术

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Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer

Published:2021-12 Issue: Volume:118 Page:105310
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Wang Zhengkang^ORCID,Qiao Ming,Li Zhaoji,Zhang Bo

Publisher

Elsevier BV

Subject

General Engineering

Reference24 articles.

1. The trench power MOSFET: Part I—history, technology, and prospects;Williams;IEEE Trans. Electron. Dev.,2017

2. Design novel structure of high-voltage MOSFET with double trench gates;Yang;Microelectron. J.,2019

3. “A new power W-gated trench MOSFET (WMOSFET) with high switching performance,” in Proc;Darwish,2003

4. Low voltage TrenchMOS combining low specific RDS(on) and QG FOM;Rutter,2010

5. Dielectric RESURF as an alternative to shield RESURF for an improved and easy-manufacture low voltage trench MOSFETs;Hossain,2017

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit;Physica Scripta;2023-11-21

2. A physics-based compact model of shield gate trench MOSFET;Microelectronics Journal;2023-01

3. Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region;Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering;2022-10-21

4. A comparative study of SiC MOSFETs with and without integrated SBD;Microelectronics Journal;2022-10

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