Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region-Reference-Cited by-同舟云学术

Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region

Published:2022-10-21 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering
language:
Short-container-title:

Author:

Zhao Chongning¹^ORCID,Hu Dongqing¹^ORCID,Zheng Yuechao¹^ORCID,Jia Yunpeng¹^ORCID,Zhou Xintian¹^ORCID,Wu Yu¹^ORCID,Li Ting¹^ORCID

Affiliation:

1. Faculty of Information Technology, Beijing University of Technology, China

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3573428.3573515

Reference8 articles.

1. Lee S P , Ngwan V C , Gautier F , A new generation of power diode: charge coupled field effect rectifier diode (CC-FERD) [C] //2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) . IEEE , 2020 : 408-411. Lee S P, Ngwan V C, Gautier F, A new generation of power diode: charge coupled field effect rectifier diode (CC-FERD) [C] //2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020: 408-411.

2. Shi L , Fan R X , Miao J Z, A Technique for Fabricating Low Voltage Charge coupled MOSFET with 0. 9UM Pitch Size [C]//2018 China Semiconductor Technology International Conference (CSTIC). IEEE , 2018: 1-3. Shi L, Fan R X, Miao J Z, A Technique for Fabricating Low Voltage Charge coupled MOSFET with 0.9UM Pitch Size [C]//2018 China Semiconductor Technology International Conference (CSTIC). IEEE, 2018: 1-3.

3. Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology

4. Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer

5. Nawaz M , Ilves K. Replacing Si to SiC: opportunities and challenges [C]//2016 46th European Solid-State Device Research Conference (ESSDERC) . IEEE , 2016 : 472-475. Nawaz M, Ilves K. Replacing Si to SiC: opportunities and challenges [C]//2016 46th European Solid-State Device Research Conference (ESSDERC). IEEE, 2016: 472-475.