Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology-Reference-Cited by-同舟云学术

Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology

Published:2016-02 Issue: Volume:57 Page:20-23
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Barletta G.,Ngwan V.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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