Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Reference31 articles.
1. Split-gate-enhanced power UMOSFET with soft reverse recovery;Wang;IEEE Trans. Electron. Dev.,2013
2. Internal self-damping optimization in trench power FETs for high-frequency conversion;Roig,2014
3. S. Deng, Z. Hossain and T. Taniguchi, “Detailed study on dynamic characteristics of a high-performance SGT-MOSFET with under-the-trench floating p-pillar,” IEEE Trans. Electron. Dev., vol. 64, no. 3, pp. 735-740, doi: 10.1109/TED.2017.2658568.
4. Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer;Wang;Microelectron. J.,2021
5. Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region;Fang;Microelectron. J.,2022
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献