Detailed Study on Dynamic Characteristics of a High-Performance SGT-MOSFET With Under-the-Trench Floating P-Pillar
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7862872/07847335.pdf?arnumber=7847335
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3. Analytically modeling electric field of shielded gate trench metal-oxide-semiconductor field effect transistor;Acta Physica Sinica;2023
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5. A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile;IET Power Electronics;2022-12-26
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