Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference16 articles.
1. Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy
2. Thermodynamic analysis of Si doping in GaN
3. Effect of SiN treatment on GaN epilayer quality
4. Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment
5. MOVPE GaN growth: determination of activation energy using in-situ reflectometry
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1. Effect of Carrier Gas on Silicon Doped GaN Epilayer Characteristics;Journal of Electronic Materials;2023-06-17
2. Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system;Sādhanā;2020-09-25
3. Solving the problem of gallium contamination problem in InAlN layers in close coupled showerhead reactors;Applied Physics Express;2019-03-25
4. Thermodynamic approach of AlGaN MOVPE growth at atmospheric pressure;Indian Journal of Physics;2019-02-01
5. In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system;Chinese Physics B;2015-09
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