Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system-Reference-Cited by-同舟云学术

Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system

Published:2020-09-25 Issue:1 Volume:45 Page:
ISSN:0256-2499
Container-title:Sādhanā
language:en
Short-container-title:Sādhanā

Author:

Chatterjee Abhishek^ORCID,Agnihotri V K,Kumar R,Porwal S,Khakha A,Jayaprakash G,Ganguli Tapas,Sharma T K

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://link.springer.com/content/pdf/10.1007/s12046-020-01471-6.pdf

Reference44 articles.

1. Nakamura S 1998 High-power InGaN-based blue laser diodes with a long lifetime J. Cryst. Growth 195: 242-247

2. Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes Appl. Phys. Lett. 67: 1868-1870

3. Nakamura S 1999 InGaN-based blue light-emitting diodes and laser diodes J. Cryst. Growth 201: 290-295

4. Razeghi M and Rogalski A 1996 Semiconductor ultraviolet detectors J. Appl. Phys. 79: 7433-7473

5. Shur M S 1998 GaN based transistors for high power applications Solid State Electron. 42: 2131-2138

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of gas pre-decomposition device on the growth of GaN epitaxial layer;Semiconductor Science and Technology;2024-05-29

2. Fabrication and photoresponsive characteristics of ultraviolet GaN p-i-n photodetector based AlN:Al2O3 passive layer;Optical Materials;2024-03

3. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor;CrystEngComm;2023

4. Ultranarrow Band UV Detection in GaN with Simple Device Architecture;physica status solidi (RRL) – Rapid Research Letters;2022-11-16