AlGaAs/InGaAs PHEMT with multiple quantum wire gates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
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1. A novel self consistent calculation approach for the capacitance‐voltage characteristics of semiconductor quantum wire transistors based on a split‐gate configuration;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2012-03-02
2. Materials and Technologies for III-V MOSFETs;Fundamentals of III-V Semiconductor MOSFETs;2010
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