A novel dual-gate high electron mobility transistor using a split-gate structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120228
Reference6 articles.
1. One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction
2. Back‐gated split‐gate transistor: A one‐dimensional ballistic channel with variable Fermi energy
3. Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures
4. Criteria for the observation of one‐dimensional transport in split‐gate field‐effect quantum wires
5. Comparisons of microwave performance between single-gate and dual-gate MODFETs
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1. Operational dynamics and architecture dependence of double-gate OFETs with balanced top and bottom channel characteristics;Journal of Materials Chemistry C;2015
2. AlGaAs/InGaAs PHEMT with multiple quantum wire gates;Microelectronics Journal;2005-03
3. Room temperature simulation of a novel quantum wire transistor;Solid-State Electronics;2001-03
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