Operational dynamics and architecture dependence of double-gate OFETs with balanced top and bottom channel characteristics-Reference-Cited by-同舟云学术

Operational dynamics and architecture dependence of double-gate OFETs with balanced top and bottom channel characteristics

Published:2015 Issue:28 Volume:3 Page:7336-7344
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Luo Xiao¹²³⁴⁵,Du Lili¹²³⁴⁵,Yao Bo¹²³⁴⁵,Lv Wenli¹²³⁴⁵,Sun Lei¹²³⁴⁵,Li Yao¹²³⁴⁵,Wu Zongyong¹²³⁴⁵,Wen Zhanwei¹²³⁴⁵,Peng Yingquan¹²³⁴⁵

Affiliation:

1. Institute of Microelectronics

2. School of Physical Science and Technology

3. Lanzhou University

4. Lanzhou 730000

5. China

Abstract

A double-gate organic field-effect transistor (DGOFET) utilizing thermally evaporated lithium fluoride (LiF) as the top gate dielectric and fluorinated copper-phthalocyanine (F₁₆CuPc) as the active channel material was reported in this article.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01540E

Reference48 articles.

1. High mobility solution processed 6,13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors

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4. Low-Voltage, Low-Power, Organic Light-Emitting Transistors for Active Matrix Displays

5. Dual-Gate Organic Field-Effect Transistors as Potentiometric Sensors in Aqueous Solution

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