One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation

Author:

Nieder J.,Wieck A. D.,Grambow P.,Lage H.,Heitmann D.,Klitzing K. v.,Ploog K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 83 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Lateral Gate 2-D Electron Gas Field-Effect Transistor;IEEE Transactions on Electron Devices;2023-08

2. Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors;IEEE Electron Device Letters;2020-03

3. On the Dynamic Performance of Laterally Gated Transistors;IEEE Electron Device Letters;2019-07

4. Application of atomic–force microscope for creation of one–dimensional structure on the basis of GaAs/AlGaAs heterostructure;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2019-06-20

5. Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure;Modern Electronic Materials;2018-12-01

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