Lateral Gate 2-D Electron Gas Field-Effect Transistor
Author:
Affiliation:
1. L2C, CNRS, Université de Montpellier, Montpellier, France
2. Centre de Nanosciences et de Nanotechnologies (C2N) UMR 9001 CNRS, Université Paris-Saclay, Palaiseau, France
3. Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Funder
“Region Occitanie” through “Magnetic-TEGFET (M-TEGFET) prematuration project.“
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10194493/10153636.pdf?arnumber=10153636
Reference27 articles.
1. GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas
2. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
3. Magnetic two-dimensional field effect transistor
4. (Invited) GaN-Based Multiple 2DEG Channel BRIDGE (Buried Dual Gate) HEMT Technology for High Power and Linearity
5. Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs
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