Magnetic two-dimensional field effect transistor-Reference-Cited by-同舟云学术

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Magnetic two-dimensional field effect transistor

Published:2017-12-04 Issue:23 Volume:111 Page:233508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Raymond A.¹,Chaubet C.¹,Chenaud B.¹,Delgard A.¹,Bisotto I.²,Harmand J. C.³,Zawadzki W.⁴

Affiliation:

1. Laboratoire Charles Coulomb (L2C), UMR 5221, CNRS, Université de Montpellier, 34095 Montpellier, France

2. LNCMI, UPR 3228, CNRS, BP 166, 38042 Grenoble, France

3. Laboratoire de Photonique et de Nanostructure (LPN), CNRS, route de Nozay, 91460 Marcoussis, France

4. Institut of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02668 Warsaw, Poland

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4994634

Reference21 articles.

1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

2. Two-dimensional electron gas m.e.s.f.e.t. structure

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral Gate 2-D Electron Gas Field-Effect Transistor;IEEE Transactions on Electron Devices;2023-08

2. Magnetic‐TEGFET: Transistor Without a Gate;physica status solidi (b);2019-01-15

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