In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102628
Reference7 articles.
1. A Unipolar "Field-Effect" Transistor
2. The transition from two- to one-dimensional electronic transport in narrow silicon accumulation layers
3. Quantized conductance of point contacts in a two-dimensional electron gas
4. One-dimensional transport and the quantisation of the ballistic resistance
5. Electronic transport through very short and narrow channels constricted in GaAs by highly resistive Ga-implanted regions
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