A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference24 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
2. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
3. High power applications for GaN-based devices
4. Electron mobility in modulation-doped AlGaN–GaN heterostructures
5. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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