Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3692767
Reference19 articles.
1. High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate
2. A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications
3. Electron dynamics in short channel field-effect transistors
4. AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICES
5. Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of the interface characteristics of Y2O3/GaAs under biaxial strain, triaxial strain, and non-strain conditions;Journal of Applied Physics;2016-09-14
2. Velocity overshoot decay mechanisms in compound semiconductor field-effect transistors with a submicron characteristic length;AIP Advances;2015-06
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