High-speed GaAs metal gate semiconductor field effect transistor structure grown on a composite Ge∕GexSi1−x∕Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2722245
Reference16 articles.
1. Gate dielectrics on compound semiconductors
2. Quality-enhanced GaAs layers grown on substrates by metalorganic chemical vapor deposition
3. Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
4. GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer
5. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures
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