Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth of high quality GaAs layers on Si substrates by MOCVD
2. Generation of misfit dislocations in semiconductors
3. Proc. 16th IEEE PVSC;Tsaur,1982
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