Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility-Reference-Cited by-同舟云学术

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Empirical model for the velocity-field characteristics of semiconductors exhibiting negative differential mobility

Published:2019-09 Issue: Volume:299 Page:113658
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Siddiqua Poppy,Wang Yana,Shur Michael S.,O'Leary Stephen K.

Funder

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference22 articles.

1. Monte Carlo determination of electron transport properties in gallium arsenide;Fawcett;J. Phys. Chem. Solids,1970

2. Transferred electron effects in n-GaAs and n-InP under hydrostatic pressure;Czubatyj;Solid State Electron.,1978

3. Electron Transport in Compound Semiconductors;Nag,1980

4. Electron mobility and velocity in compensated GaAs;Xu;Appl. Phys. Lett.,1986

5. Monte Carlo simulation of semiconductor devices;Jensen;Comput. Phys. Commun.,1991

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing the effectiveness of an empirical model for a compound semiconductor’s velocity-field characteristic;Solid State Communications;2023-10

2. An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide;Solid State Communications;2021-05

3. The influence of saturation of electron drift velocity on photorefractive effect in GaAs/AlGaAs quantum wells structures;Optics & Laser Technology;2021-02

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