Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes-Reference-Cited by-同舟云学术

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Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes

Published:2021-08 Issue: Volume:25 Page:101297
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Balasubramani V.,Chandrasekaran J.^ORCID,Manikandan V.,Le Top Khac,Marnadu R.,Vivek P.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference65 articles.

1. Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n -Si Schottky diode;Mahato;AIP Adv.,2017

2. Effect of organic additives on the characteristics of Al/organic additive:ZrO2/p-Si metal–insulator-semiconductor (MIS) type Schottky barrier diodes;Sasikumar;J. Inorg. Organomet. Polym. Mater.,2020

3. Effect of annealing temperature on structural and electrical properties of Al/ZrO2/p-Si MIS Schottky diodes;Sasikumar;Silicon,2018

4. Impact of annealing temperature on spin coated V2O5 thin films as interfacial layer in Cu/V2O5/n-Si structured Schottky barrier diodes;Balasubramani;J. Inorg. Organomet. Polym. Mater.,2019

5. Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes;Balasubramani;Inorg. Chem. Commun.,2020

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