Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes-Reference-Cited by-同舟云学术

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Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes

Published:2020-09 Issue: Volume:119 Page:108072
ISSN:1387-7003
Container-title:Inorganic Chemistry Communications
language:en
Short-container-title:Inorganic Chemistry Communications

Author:

Balasubramani V.,Chandrasekaran J.,Manikandan V.,Marnadu R.,Vivek P.,Balraju P.

Funder

Department of Science and Technology-Science and Engineering Research Board

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry

Reference43 articles.

1. Luminescence and electrochemical properties of rare earth (Gd, Nd) doped V2O5 nanostructures synthesized by a non-aqueous sol–gel route

2. Impact of Annealing Temperature on Spin Coated V2O5 Thin Films as Interfacial Layer in Cu/V2O5/n-Si Structured Schottky Barrier Diodes

3. A review of the growth of V2O5 films from 1885 to 2010

4. A review on the optical characterization of V2O5 micro-nanostructures

5. Effect of post-growth annealing on the structural, optical and electrical properties of V 2 O 5 nanorods and its fabrication, characterization of V 2 O 5 /p-Si junction diode

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