Abstract
Abstract
V2O5 shows a diverse range of applications due to its remarkable electronic and optical properties. This research is designed to tune the electronic and optical properties of V2O5 through modification in the energy band profile by varying Zn doping concentration. Density functional theory (DFT) calculations were used to investigate the Density of States (DOS) spectra for pure V2O5, exhibiting the prominent contribution of V-d and O-p orbitals, representing the p-d hybridized orbitals along with additional Zn-d orbital contribution in Zn-doped compositions. The effects of doping on the structural, morphological, elemental, and optical properties of the developed thin films were investigated employing x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray dispersive spectroscopy (EDX), and spectroscopic ellipsometry (SE), respectively. x-ray diffraction analysis revealed the orthorhombic crystal structure in thin films. Surface morphology depicts the uniformly distributed compact rod-like features. The experimentally calculated band gap was found to decrease with Zn doping from 2.77 eV for pure V2O5 to 2.45 eV for maximum doping content. A significant variation is recorded in optical parameters like the increase in absorption coefficient and optical conductivity, which makes these more favorable for optoelectronic devices, particularly focusing on photovoltaics.