The dependence of the optical properties on the As mole fraction in modulation-doped strained single quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference25 articles.
1. Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP Heterostructures
2. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
3. Gas‐source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures
4. Highly anisotropic electron mobilities of GaAs/In0.2Ga0.8As/Al0.3Ga0.7As inverted high electron mobility transistor structures
5. Novel strained InP/InAsxP1−xquantum‐well modulation‐doped heterostructures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and optical characterization of nanocrystals of the InAs–InP system embedded in amorphous SiO2 thin films;Thin Solid Films;2001-12
2. Preparation and optical properties of InAs0.4P0.6nanocrystal alloy embedded in SiO2thin films;Semiconductor Science and Technology;2001-05-11
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