Gas‐source molecular beam epitaxy growth of highly strained device quality InAsP/InP multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104733
Reference9 articles.
1. Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy
2. Growth of InP, InGaAs, and InGaAsP on InP by gas-source molecular beam epitaxy
3. Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy
4. Structural and Optical Properties of Highly Strained InAs x P 1 − x / InP Heterostructures
5. Composition effects in the growth of Ga(In)AsyP1-y alloys by MBE
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1. Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers;Journal of Applied Physics;2014-05-21
2. Comparative studies of p-type InP layers formed by Zn3As2 and Zn3P2 diffusion;Journal of Electronic Materials;2003-09
3. Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2000-01
4. The Dependence of the Electron Carrier Occupation in the Subband on the As Mole Fraction in Modulation-Doped InAsxP1—x/InP Strained Single Quantum Wells;physica status solidi (a);1998-07
5. The dependence of the optical properties on the As mole fraction in modulation-doped strained single quantum wells;Solid State Communications;1998-04
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