Optical properties of InGaN/GaN double quantum wells with varying well thickness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
3. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
4. Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
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1. Field dependent ultrafast carrier dynamics in InGaN/GaN p-i(MQW)-n structure;Superlattices and Microstructures;2020-01
2. On the donor states in double InxGa1 −xN/InyGa1 −yN/GaN staggered quantum wells;Semiconductor Science and Technology;2013-10-08
3. Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields;Optics Express;2012-10-22
4. Carrier dynamics of InxGa1−xN quantum disks embedded in GaN nanocolumns;Journal of Applied Physics;2011-03-15
5. Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap;Journal of Applied Physics;2010-02
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